5秒后页面跳转
BC557ZL1 PDF预览

BC557ZL1

更新时间: 2024-11-27 22:17:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
8页 111K
描述
Amplifier Transistors

BC557ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.03Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):320 MHzBase Number Matches:1

BC557ZL1 数据手册

 浏览型号BC557ZL1的Datasheet PDF文件第2页浏览型号BC557ZL1的Datasheet PDF文件第3页浏览型号BC557ZL1的Datasheet PDF文件第4页浏览型号BC557ZL1的Datasheet PDF文件第5页浏览型号BC557ZL1的Datasheet PDF文件第6页浏览型号BC557ZL1的Datasheet PDF文件第7页 
BC556B, BC557, A, B, C,  
BC558B, C  
Amplifier Transistors  
PNP Silicon  
http://onsemi.com  
COLLECTOR  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
Vdc  
2
CEO  
1
BC556  
BC557  
BC558  
–65  
–45  
–30  
BASE  
2
3
3
CASE 29  
TO–92  
Collector-Base Voltage  
Emitter-Base Voltage  
V
Vdc  
CBO  
EBO  
EMITTER  
BC556  
BC557  
BC558  
–80  
–50  
–30  
STYLE 17  
ORDERING INFORMATION  
V
–5.0  
Vdc  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
Collector Current – Continuous  
Collector Current – Peak  
I
–100  
–200  
mAdc  
C
I
CM  
BC556B  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Base Current – Peak  
I
–200  
mAdc  
BM  
BC556BRL1  
BC556BZL1  
BC557  
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
P
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
BC557ZL1  
2000/Ammo Pack  
C
Derate above 25°C  
BC557A  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
BC557AZL1  
BC557B  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BC557BRL1  
BC557BZL1  
BC557C  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θJA  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θJC  
BC557CZL1  
BC558B  
2000/Ammo Pack  
5000 Units/Box  
BC558BRL  
BC558BRL1  
BC558BZL1  
BC558C  
2000/Tape & Reel  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
BC558CRL1  
BC558ZL1  
BC558CZL1  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2000 – Rev. 1  
BC556/D  

与BC557ZL1相关器件

型号 品牌 获取价格 描述 数据表
BC557サ INFINEON

获取价格

PNP SILICON TRANSISTORS
BC558 BOCA

获取价格

PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC558 SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor for switching and AF applications
BC558 DIOTEC

获取价格

Si-Epitaxial PlanarTransistors
BC558 MICRO-ELECTRONICS

获取价格

PNP SILICON AF SMALL SIGNAL TRANSISTOR
BC558 NXP

获取价格

PNP general purpose transistors
BC558 WEITRON

获取价格

General Purpose Si-Epitaxial PlanarTransistors
BC558 FAIRCHILD

获取价格

PNP EPITAXIAL SILICON TRANSISTOR
BC558 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
BC558 UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS