BC558

更新时间： 2024-11-03 22:48:15

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	89K
描述
Si-Epitaxial PlanarTransistors

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中文翻译

获取价格

数据手册

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BC558 数据手册

BC 556 ... BC 559

PNP

General Purpose Transistors

PNP

Si-Epitaxial PlanarTransistors

Power dissipation – Verlustleistung

500 mW

Plastic case

TO-92

(10D3)

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Pinning

Standard Lieferform gegurtet in Ammo-Pack

1 = C 2 = B 3 = E

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BC 556

65 V

80 V

BC 557

45 V

50 V

BC 558/559

30 V

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (DC)

Junction temp. – Sperrschichttemperatur

B open

E open

C open

- V_CE0

- V_CB0

- V_EB0

P_tot

- I_C

T_j

30 V

5 V

500 mW ¹)

100 mA

150ꢀC

Storage temperature – Lagerungstemperatur

T_S

- 55…+ 150ꢀC

Characteristics (T_j= 25ꢀC)

Kennwerte (T_j= 25ꢀC)

Group A

Group B

Group C

DC current gain – Kollektor-Basis-Stromverhältnis

- V_CE= 5 V, - I_C= 2 mA

h_FE

110...220

200...460

420...800

h-Parameters at - V_CE= 5V, - I_C= 2 mA, f = 1 kHz

Small signal current gain

h_fe

typ. 220

typ. 330

typ. 600

Stromverstärkung

Input impedance – Eingangsimpedanz

Output admittance – Ausg.-Leitwert

h_ie

h_oe

1.6...4.5 kꢀ

18 < 30 ꢁS

3.2...8.5 kꢀ

30 < 60 ꢁS

6...15 kꢀ

60 < 110 ꢁS

Reverse voltage transfer ratio

Spannungsrückwirkung

Collector saturation voltage – Kollektor-Sättigungsspg.

- I_C= 100 mA, - I_B= 5 mA -V_CEsat

h_re

typ.1.5 *10^-4

typ. 2 *10^-4

typ. 3 *10^-4

300 mV

–

)

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

01.11.2003

中文翻译

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