Datasheet > BC558

BC558

更新时间： 2024-11-29 14:52:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
4页	1174K
描述
双极型晶体管

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技术参数
数据手册

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BC558 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.1	DC current gain - Min：	120
DC current gain - Max：	800	Transition frequency：	150
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

BC558 数据手册

BC556/557/558(PNP)

TO-92 Bipolar Transistors

COLLECTOR

TO-92

2. BASE

EMITTER

Features

ꢀ

High Voltage

Complement to BC546/BC547/BC548

ꢀ

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

Collector-Base Voltage

BC556

BC557

BC558

-80

-50

-30

-65

V_CBO

-45

-30

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

-5

-100

625

℃

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Dimensions in inches and (millimeters)

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

BC556

BC557

BC558

BC556

BC557

BC558

-80

V_CBO

I_C= -100μA, I_E=0

-50

-30

-65

-45

-30

Collector-emitter breakdown voltage

V_CEO

V_EBO

I_CBO

I_C= -2mA , I_B=0

Emitter-base breakdown voltage

Collector cut-off current

I_E= -100μA, I_C=0

-5

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

BC557A

V_CB=- 70 V, I_E=0

_CB= -45 V, I_E=0

_CB= -25V, I_E=0

-0.1

μA

Collector cut-off current

Emitter cut-off current

DC current gain

V_CE= -60 V, I_B=0

I_CEO

_CE= -40 V, I_B=0

_CE= -25 V, I_B=0

μA

I_EBO

V_EB= -5 V, I_C=0

120

180

420

800

220

460

800

h_FE

V_CE=-5V, I_C= -2mA

BC556B/BC557B/BC558B

BC557C

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=-100mA, I_B= -5mA

I_C= -100mA, I_B=-5mA

-0.65

-1

Base-emitter saturation voltage

Transition frequency

V_CE= -5V, I_C= -10mA

f _T

150

MHz

f = 100MHz

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