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BC558

更新时间: 2024-01-26 06:22:40
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 68K
描述
TRANSISTOR (PNP)

BC558 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):0.1 A
配置:SingleJESD-609代码:e0
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC558 数据手册

  
RoHS  
BC556B/57ABC/58B  
BC556, B  
BC557, A, B, C  
BC558, B  
TRANSISTOR (PNP)  
TO-92  
FEATURES  
Power dissipation  
PCM:  
Collector current  
ICM:  
1. COLLECTOR  
2. BASE  
0.625 W (Tamb=25)  
3. EMITTER  
-0.1  
A
Collector-base voltage  
1 2 3  
VCBO  
:
BC556 -80  
BC557 -50  
BC558 -30  
V
V
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN MAX UNIT  
-80  
Collector-base breakdown voltage  
BC556  
BC557  
BC558  
BC556  
VCBO  
Ic= -100µA, IE=0  
-50  
-30  
-65  
-45  
-30  
V
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
IC= -2mA , IB=0  
V
V
BC557  
BC558  
IE= -100µA, IC=0  
VCB=- 70 V, IE=0  
-6  
Emitter-base breakdown voltage  
Collector cut-off current  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
V
CB= -45 V, IE=0  
CB= -25V, IE=0  
VCE= -60 V, IB=0  
-0.1  
-0.1  
-0.1  
µA  
V
Collector cut-off current  
ICEO  
V
CE= -40 V, IB=0  
CE= -25 V, IB=0  
µA  
µA  
V
Emitter cut-off current  
DC current gain  
IEBO  
VEB= -5 V, IC=0  
BC556  
BC557  
BC558  
120  
120  
120  
120  
180  
420  
500  
800  
800  
220  
460  
800  
hFE(1)  
VCE=-5V, IC= -2mA  
BC557A  
BC556B/BC557B/BC558B  
BC557C  
WEJ ELECTRONIC CO.,LTD  
VCE(sat) IC=-100mA, IB= -5mA  
-0.3  
V
Collector-emitter saturation voltage  
VBE(sat)  
IC= -100mA, IB=-5mA  
-1  
V
Base-emitter saturation voltage  
VCE= -5V, IC= -10mA  
150  
MHz  
Transition frequency  
f T  
f = 100MHz  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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