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BC558

更新时间: 2024-11-27 22:48:15
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管
页数 文件大小 规格书
4页 690K
描述
PNP Silicon Amplifier Transistor 625mW

BC558 数据手册

 浏览型号BC558的Datasheet PDF文件第2页浏览型号BC558的Datasheet PDF文件第3页浏览型号BC558的Datasheet PDF文件第4页 
M C C  
BC556,B  
BC557,A,B,C  
BC558,B  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
l Through Hole Package  
l 150oC Junction Temperature  
PNP Silicon  
Amplifier Transistor  
625mW  
Pin Configuration  
Bottom View  
C
B
E
TO-92  
A
E
Mechanical Data  
l Case: TO-92, Molded Plastic  
l Polarity: indicated as above.  
B
Maximum Ratings @ 25oC Unless Otherwise Specified  
Charateristic  
Symbol Value Unit  
Collector-Emitter Voltage BC556  
-65  
-45  
-30  
-80  
-50  
-30  
C
VCEO  
BC557  
BC558  
V
Collector-Base Voltage  
BC556  
BC557  
BC558  
VCBO  
V
V
D
VEBO  
IC  
Emitter-Base Voltage  
Collector Current(DC)  
-5.0  
-100  
mA  
mW  
625  
5.0  
1.5  
12  
o
Pd  
Pd  
Power Dissipation@TA=25 C  
Power Dissipation@TC=25oC  
mW/oC  
W
G
mW/oC  
DIMENSIONS  
Thermal Resistance, Junction to  
Ambient Air  
oC/W  
R
200  
JA  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.70  
4.70  
---  
NOTE  
.185  
.185  
---  
.020  
.145  
.105  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
Thermal Resistance, Junction to  
Case  
Operating & Storage Temperature T, TSTG -55~150 oC  
oC/W  
R
83.3  
JC  
0.63  
3.68  
2.67  
E
G
j
www.mccsemi.com  

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