BC558

更新时间： 2024-11-03 22:48:15

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管
页数	文件大小	规格书
4页	690K
描述
PNP Silicon Amplifier Transistor 625mW

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中文翻译

获取价格

数据手册

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BC558 数据手册

M C C

BC556,B

BC557,A,B,C

BC558,B

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

l Through Hole Package

l 150^oC Junction Temperature

PNP Silicon

Amplifier Transistor

625mW

Pin Configuration

Bottom View

TO-92

Mechanical Data

l Case: TO-92, Molded Plastic

l Polarity: indicated as above.

Maximum Ratings @ 25^oC Unless Otherwise Specified

Charateristic

Symbol Value Unit

Collector-Emitter Voltage BC556

-65

-45

-30

-80

-50

-30

V_CEO

BC557

BC558

Collector-Base Voltage

BC556

BC557

BC558

V_CBO

V_EBO

I_C

Emitter-Base Voltage

Collector Current(DC)

-5.0

-100

625

5.0

1.5

P_d

Power Dissipation@T_A=25 C

Power Dissipation@T_C=25^oC

mW/^oC

DIMENSIONS

Thermal Resistance, Junction to

Ambient Air

^oC/W

200

INCHES

MIN

.175

.500

.016

.135

.095

MIN

DIM

MAX

4.70

---

NOTE

.185

---

.020

.145

.105

4.45

4.46

12.7

0.41

3.43

2.42

Thermal Resistance, Junction to

Case

Operating & Storage Temperature T, T_STG-55~150 ^oC

^oC/W

83.3

0.63

3.68

2.67

www.mccsemi.com

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中文翻译

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