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BC557ARLRA PDF预览

BC557ARLRA

更新时间: 2024-11-06 03:21:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
25页 310K
描述
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC557ARLRA 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
MAXIMUM RATINGS  
1
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol BC556 BC557 BC558  
Unit  
Vdc  
3
V
CEO  
V
CBO  
V
EBO  
–65  
–80  
–45  
–50  
–30  
–30  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Vdc  
–5.0  
–100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
V
V
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
BC556  
BC557  
BC558  
–65  
–45  
–30  
C
B
CollectorBase Breakdown Voltage  
(I = –100 µAdc)  
C
BC556  
BC557  
BC558  
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
BC556  
BC557  
BC558  
–5.0  
–5.0  
–5.0  
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
= –40 V)  
= –20 V)  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
–2.0  
–2.0  
–2.0  
–100  
–100  
–100  
–4.0  
–4.0  
–4.0  
nA  
(V  
CES  
= –20 V, T = 125°C)  
µA  
A
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–123  

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