Datasheet > BC557B

BC557B

更新时间： 2024-11-27 22:48:15

品牌	Logo	应用领域
博卡 - BOCA		晶体晶体管开关局域网
页数	文件大小	规格书
3页	61K
描述
PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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BC557B 数据手册

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BC 556, A, B

BC 557, 8, A, B, C

TO-92

Boca Semiconductor Corp.

BSC

EBC

http://www.bocasemi.com

APPLICATION

PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio

Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing

Circuits of Television Receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VCEO

VCES

VCBO

VEBO

BC556

BC558

UNITS

BC557

5.0

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

100

Peak

ICM

200

Base Current -Peak

IBM

200

Emitter Current- Peak

IEM

200

Power Dissipation@ Ta=25 degC

Derate Above 25 deg C

Storage Temperature

PTA

500

4.0

-65 to +150

150

mW/deg C

deg C

Tstg

Junction Temperature

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)

250

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

BC556

>65

>80

BC557

>45

>50

BC558

>30

UNITS

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

Collector-Cut off Current

VCEO

VCBO

VEBO

ICBO

IC=2mA,IB=0

IC=100uA.IE=0

IE=100uA, IC=0 ALL

VCB=30V, IE=0 ALL

>5.0

<15

Tj=150 deg C

<5.0

VCB=30V, IE=0 ALL

VCE=80V, VBE=0

VCE=50V, VBE=0

VCE=30V, VBE=0

ICES

<15

TJ=125 deg C

Collector-Cut off Current

VCE=80V, VBE=0

VCE=50V, VBE=0

VCE=30V, VBE=0

<4.0

12 3

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