5秒后页面跳转
BC557AZL1G PDF预览

BC557AZL1G

更新时间: 2024-02-14 17:21:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
7页 78K
描述
Amplifier Transistors PNP Silicon

BC557AZL1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.04
Is Samacsys:N其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:COMMERCIAL表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):320 MHzBase Number Matches:1

BC557AZL1G 数据手册

 浏览型号BC557AZL1G的Datasheet PDF文件第2页浏览型号BC557AZL1G的Datasheet PDF文件第3页浏览型号BC557AZL1G的Datasheet PDF文件第4页浏览型号BC557AZL1G的Datasheet PDF文件第5页浏览型号BC557AZL1G的Datasheet PDF文件第6页浏览型号BC557AZL1G的Datasheet PDF文件第7页 
BC556B, BC557A, B, C,  
BC558B, C  
Amplifier Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
1
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
Unit  
Collector - Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
3
BC556  
BC557  
BC558  
−65  
−45  
−30  
EMITTER  
Collector - Base Voltage  
Emitter - Base Voltage  
Vdc  
BC556  
BC557  
BC558  
−80  
−50  
−30  
−5.0  
Vdc  
TO−92  
CASE 29  
STYLE 17  
Collector Current − Continuous  
Collector Current − Peak  
I
−100  
−200  
mAdc  
C
I
I
1
CM  
2
3
Base Current − Peak  
−200  
mAdc  
BM  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
D
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
MARKING DIAGRAM  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
BC  
55xx  
AYWW G  
G
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Ambient  
R
200  
°C/W  
q
JA  
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BC55x = Device Code  
x = 6, 7, or 8  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 2  
BC556B/D  

BC557AZL1G 替代型号

型号 品牌 替代类型 描述 数据表
BC557AZL1 ONSEMI

完全替代

Amplifier Transistors
BC557ATA ONSEMI

类似代替

100 mA, 45 V, PNP Bipolar Juction Transistor

与BC557AZL1G相关器件

型号 品牌 获取价格 描述 数据表
BC557B FAIRCHILD

获取价格

NPN EPITAXIAL SILICON TRANSISTOR
BC557B WEITRON

获取价格

PNP General Purpose Transistor
BC557B MCC

获取价格

PNP Silicon Amplifier Transistor 625mW
BC557B WINNERJOIN

获取价格

TRANSISTOR (PNP)
BC557B SECOS

获取价格

Elektronische Bauelemente
BC557B RECTRON

获取价格

PNP Silicon Planar Epitaxial Transistors
BC557B NXP

获取价格

PNP general purpose transistors
BC557B MOTOROLA

获取价格

Amplifier Transistors
BC557B ONSEMI

获取价格

Amplifier Transistors(PNP Silicon)
BC557B INFINEON

获取价格

PNP SILICON TRANSISTORS