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BC547BTAR PDF预览

BC547BTAR

更新时间: 2024-09-20 13:05:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 29K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC547BTAR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, TO-92, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.06
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC547BTAR 数据手册

 浏览型号BC547BTAR的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BC547  
BC547A  
BC547B  
BC547C  
TO-92  
E
B
C
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced from  
Process 10. See PN100A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
45  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BC547 / A / B / C  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  
547ABC, Rev B  

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