BC547BZL1

更新时间： 2024-09-19 22:28:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	95K
描述
Amplifier Transistors

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数据手册

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BC547BZL1 数据手册

BC546B, BC547A, B, C,

BC548B, C

Amplifier Transistors

NPN Silicon

Features

http://onsemi.com

• Pb−Free Package is Available*

COLLECTOR

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

EMITTER

Collector-Emitter Voltage

CEO

CBO

EBO

Vdc

BC546

BC547

BC548

MARKING

DIAGRAM

Collector-Base Voltage

Emitter-Base Voltage

Vdc

TO−92

CASE 29

STYLE 17

BC546

BC547

BC548

54xx

YWWG

6.0

Vdc

Collector Current − Continuous

100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

BC54xx = Specific Device Code

= Year

WW = Work Week

Total Device Dissipation @ T = 25°C

1.5

Watt

mW/°C

Derate above 25°C

= Pb−Free Package

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

200

°C/W

Junction−to−Ambient

Thermal Resistance,

Junction−to−Case

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

May, 2004 − Rev. 4

BC546/D

12 3 4 5 6

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