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BC547BRL1G PDF预览

BC547BRL1G

更新时间: 2024-11-08 04:08:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
6页 69K
描述
Amplifier Transistors NPN Silicon

BC547BRL1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:6.18
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC547BRL1G 数据手册

 浏览型号BC547BRL1G的Datasheet PDF文件第2页浏览型号BC547BRL1G的Datasheet PDF文件第3页浏览型号BC547BRL1G的Datasheet PDF文件第4页浏览型号BC547BRL1G的Datasheet PDF文件第5页浏览型号BC547BRL1G的Datasheet PDF文件第6页 
BC546B, BC547A, B, C,  
BC548B, C  
Amplifier Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
COLLECTOR  
1
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
Unit  
Collector - Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC546  
BC547  
BC548  
65  
45  
30  
3
EMITTER  
Collector - Base Voltage  
Emitter - Base Voltage  
Vdc  
BC546  
BC547  
BC548  
80  
50  
30  
6.0  
Vdc  
TO−92  
CASE 29  
STYLE 17  
Collector Current − Continuous  
I
100  
mAdc  
C
1
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
2
A
D
3
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
W
mW/°C  
C
MARKING DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BC  
54x  
Thermal Resistance,  
Junction−to−Ambient  
R
200  
°C/W  
q
JA  
AYWWG  
G
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BC54x = Device Code  
x = 6, 7, or 8  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
BC546/D  

BC547BRL1G 替代型号

型号 品牌 替代类型 描述 数据表
BC547BG ONSEMI

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Amplifier Transistors NPN Silicon
BC547BZL1G ONSEMI

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Amplifier Transistors NPN Silicon
BC547B ONSEMI

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Amplifier Transistors(NPN Silicon)

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