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BC547ATAR PDF预览

BC547ATAR

更新时间: 2024-09-20 13:05:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
6页 144K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

BC547ATAR 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, TO-92, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.32Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:975218
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-92
Samacsys Released Date:2020-04-19 04:39:06Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC547ATAR 数据手册

 浏览型号BC547ATAR的Datasheet PDF文件第2页浏览型号BC547ATAR的Datasheet PDF文件第3页浏览型号BC547ATAR的Datasheet PDF文件第4页浏览型号BC547ATAR的Datasheet PDF文件第5页浏览型号BC547ATAR的Datasheet PDF文件第6页 
Order this document  
by BC546/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
546  
547  
548  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
65  
45  
30  
80  
50  
30  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mA, I = 0)  
BC546  
BC547  
BC548  
V
65  
45  
30  
V
V
V
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc)  
C
BC546  
BC547  
BC548  
V
80  
50  
30  
(BR)CBO  
EmitterBase Breakdown Voltage  
BC546  
BC547  
BC548  
V
6.0  
6.0  
6.0  
(BR)EBO  
(I = 10 A, I = 0)  
E
C
Collector Cutoff Current  
I
CES  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 70 V, V  
= 50 V, V  
= 35 V, V  
= 0)  
= 0)  
= 0)  
BC546  
BC547  
BC548  
BC546/547/548  
0.2  
0.2  
0.2  
15  
15  
15  
4.0  
nA  
BE  
BE  
BE  
= 30 V, T = 125°C)  
µA  
A
REV 1  
Motorola, Inc. 1996  

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