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BC547B PDF预览

BC547B

更新时间: 2024-11-08 18:50:19
品牌 Logo 应用领域
CENTRAL 晶体管
页数 文件大小 规格书
2页 330K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

BC547B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.13最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

BC547B 数据手册

 浏览型号BC547B的Datasheet PDF文件第2页 
BC546,A,B  
BC547,A,B,C  
BC548,A,B,C  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
The CENTRAL SEMICONDUCTOR BC546, BC547,  
BC548 series devices are silicon NPN small signal  
transistors, manufactured by the epitaxial planar  
process, designed for general purpose amplifier  
applications.  
NPN TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-92-18R CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BC546  
80  
80  
65  
6.0  
BC547  
50  
50  
45  
6.0  
100  
200  
200  
200  
BC548  
30  
30  
30  
5.0  
UNITS  
V
V
V
V
mA  
mA  
mA  
mA  
mW  
°C  
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
V
CBO  
CES  
CEO  
EBO  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Peak Emitter Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
Thermal Resistance  
I
C
I
I
I
CM  
BM  
EM  
P
500  
-65 to +150  
250  
D
T , T  
J
stg  
JA  
JC  
Θ
°C/W  
°C/W  
Θ
150  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
15  
5.0  
250  
600  
UNITS  
nA  
μA  
mV  
mV  
mV  
mV  
mV  
mV  
I
I
V
V
=30V  
=30V, T =150°C  
CBO  
CBO  
CB  
CB  
A
B
B
B
B
C
V
V
V
V
V
V
h
h
h
h
h
h
h
h
h
I =10mA, I =0.5mA  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
BE(ON)  
FE  
C
I =100mA, I =5.0mA  
C
I =10mA, I =0.5mA  
700  
900  
C
I =100mA, I =5.0mA  
C
V
=5.0V, I =2.0mA  
580  
110  
700  
770  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, I =10mA  
C
=5.0V, I =10μA (BC546,A, BC547,A, BC548,A)  
90  
150  
270  
C
=5.0V, I =10μA (BC546B, BC547B, BC548B)  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
fe  
C
C
=5.0V, I =10μA (BC547C, BC548C)  
=5.0V, I =2.0mA (BC546)  
450  
220  
450  
800  
800  
900  
C
C
C
C
=5.0V, I =2.0mA (BC546A, BC547A, BC548A) 110  
=5.0V, I =2.0mA (BC546B, BC547B, BC548B) 200  
=5.0V, I =2.0mA (BC547, BC548)  
110  
420  
125  
=5.0V, I =2.0mA (BC547C, BC548C)  
C
=5.0V, I =2.0mA, f=1.0kHz  
C
f
=5.0V, I =10mA, f=35MHz  
300  
2.5  
9.0  
MHz  
pF  
pF  
T
C
C
C
NF  
=10V, I =0, f=1.0MHz  
E
ob  
ib  
=0.5V, I =0, f=1.0MHz  
C
=5.0V, I =0.2mA, R =2.0kΩ,  
C G  
B=200Hz, f=1.0kHz  
2.0  
10  
dB  
R1 (13-December 2013)  

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