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BC51-16PA-Q PDF预览

BC51-16PA-Q

更新时间: 2024-11-06 15:18:31
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 244K
描述
45 V, 1 A PNP medium power transistorsProduction

BC51-16PA-Q 数据手册

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BC51PA-Q series  
45 V, 1 A PNP medium power transistors  
Rev. 1 — 16 October 2023  
Product data sheet  
1. General description  
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device  
(SMD) plastic package.  
2. Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity  
Leadless very small SMD plastic package with medium power capability  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Linear voltage regulators  
High-side switches  
Battery-driven devices  
Power management  
MOSFET drivers  
Amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
-45  
-1  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC51PA-Q  
open base  
-
-
-
-
-
-
A
ICM  
single pulse; tp ≤ 1 ms  
-2  
A
hFE  
VCE = -2 V; IC = -150 mA  
Tamb = 25 °C  
[1]  
[1]  
[1]  
63  
-
-
-
250  
160  
250  
BC51-10PA-Q  
63  
BC51-16PA-Q  
100  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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