Datasheet > BC516_V01

BC516_V01

更新时间： 2024-02-20 04:32:52

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安森美 - ONSEMI		/
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描述
PNP Darlington Transistor

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BC516_V01 数据手册

BC516

PNP Darlington Transistor

Features

• This device is designed for applications reguiring extremely

high current gain at currents to 1 A.

• Sourced from process 61.

TO-92

1. Collector 2. Base 3. Emitter

Ordering Information

Part Number

Top Mark

Package

Packing Method

Tape and Reel

BC516-D27Z

BC516

TO-92 3L

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T_A= 25°C unless otherwise noted.

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

-30

-40

-10

Collector Current - Continuous

-1

T_J, T_STGOperating and Storage Junction Temperature Range

-55 to +150

°C

September-2017, Rev. 2

Publication Order Number:

BC516-D27Z/D

12 3 4

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