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BC516_D74Z PDF预览

BC516_D74Z

更新时间: 2024-02-16 17:23:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
3页 23K
描述
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC516_D74Z 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):30000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC516_D74Z 数据手册

 浏览型号BC516_D74Z的Datasheet PDF文件第2页浏览型号BC516_D74Z的Datasheet PDF文件第3页 
BC516  
PNP Darlington Transistor  
This device is designed for applications reguiring extremely high  
current gain at currents to 1mA.  
Sourced from process 61.  
TO-92  
1. Collector 2. Base 3. Emitter  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
30  
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
V
CBO  
EBO  
10  
1
V
I
- Continuous  
= 25°C  
A
C
P
Total Power Dissipation  
T
625  
mW  
°C  
D
A
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
30  
Typ.  
Max. Units  
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 2mA, I = 0  
V
V
V
CEO  
CBO  
EBO  
CBO  
C
C
E
B
V
V
= 100µA, I = 0  
40  
E
= 10µA, I = 0  
10  
C
I
V
= 30V, I = 0  
100  
nA  
CB  
E
h
DC Current Gain  
I
= 20mA, V = 2V  
30,00  
0
FE  
C
CE  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
I
= 100mA, I = 0.1mA  
1
V
V
CE  
C
C
C
B
= 10mA, V = 5V  
1.4  
BE  
CE  
f
Current Gain Bandwidth Product (2)  
= 10mA, V = 5V, f = 100MHz  
200  
MHZ  
T
CE  
NOTES:  
1. Pulse Test Pulse Width 2%  
2. = Ih I · f  
f
T
fe test  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
Max.  
Units  
R
R
200  
°C/W  
°C/W  
θJA  
θJC  
83.3  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, August 2002  

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