Datasheet > BC516

BC516

更新时间： 2024-01-14 19:21:50

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管达林顿晶体管
页数	文件大小	规格书
1页	78K
描述
PNP Silicon Darlington Transistor

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中文翻译

获取价格

技术参数
数据手册

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BC516 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6

BC516 数据手册

BC516

PNP Silicon Darlington Transistor

Collector

Base

Emitter

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

-V_CBO

-V_CEO

-V_EBO

-I_C

Collector Current (DC)

Peak Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

500

-I_CM

P_tot

800

500

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 2 V, -I_C= 20 mA

Collector Base Cutoff Current

at -V_CB= 30 V

Emitter Base Cutoff Current

at -V_EB= 10 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

Emitter Base Breakdown Voltage

at -I_E= 10 µA

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 0.1 mA

h_FE

30000

100

-I_CBO

-I_EBO

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

-V_BE(on)

f_T

Base Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 0.1 mA

Base Emitter On Voltage

at -V_CE= 5 V, -I_C= 10 mA

Transition Frequency

1.5

1.4

125

MHz

at -V_CE= 5 V, -I_C= 10 mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/01/2008

中文翻译

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