Datasheet > BC338-16

BC338-16

更新时间： 2024-11-28 06:41:35

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关
页数	文件大小	规格书
3页	121K
描述
NPN Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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BC338-16 数据手册

M C C

BC337-16/25/40

BC338-16/25/40

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN

Plastic-Encapsulate

Transistors

xꢀ Capable of 0.625Watts of Power Dissipation.

xꢀ Collector-current 0.8A

xꢀ Collector-base Voltage :V_CBO=50V(BC337) , V_CBO=30V(BC338)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

TO-92

xꢀ Operating temperature : -55к to +150к

xꢀ Storage temperature : -55к to +150к

Electrical Characteristics @ 25к Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

---

Vdc

BC337

BC338

V_(BR)CBO

Collector-Base Breakdown Voltage

(I_C=100µAdc, I_E=0)

---

Vdc

BC337

BC338

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_E=10µAdc, I_C=0)

5.0

Vdc

Collector Cutoff Current

(V_CB=45Vdc,I_E=0)

(V_CB=25Vdc,I_E=0)

µAdc

BC337

BC338

---

0.1

I_CEO

Collector Cutoff Current

(V_CE=40Vdc,I_B=0)

(V_CE=20Vdc,I_B=0)

µAdc

BC337

BC338

---

0.2

0.1

I_EBO

Emitter Cutoff Current

(V_EB=4.0Vdc, I_C=0)

1.COLLECTOR

2.BASE

ON CHARACTERISTICS

h_FE(2)

V_CE(sat)

V_BE(sat)

DC Current Gain

(I_C=300mAdc, V_CE=1.0Vdc)

---

0.7

1.2

3.EMITTER

Collector-Emitter Saturation Voltage

(I_C=500mAdc, I_B=50mAdc)

Vdc

Base-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

---

DIMENSIONS

SMALL SIGNAL CHARACTERISTICS

f_T

Current-Gain-Bandwidth Product

(V_CE=5.0V, f=100MHz, I_C=10mA)

210

---

MHz

INCHES

MIN

.170

.550

.010

.130

.010

DIM

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

hFE CLASSIFICATION

Classification

h_FE(1)

100~250

A 011

160~400

B 011

250~630

C 011

Marking Code

www.mccsemi.com

1 of 3

Revision: 4

2006/05/18

12 3

中文翻译

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与BC338-16相关器件

型号	品牌	获取价格	描述	数据表
BC338-16/E7	VISHAY	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226A
BC338-16-AMMO	NXP	获取价格	TRANSISTOR 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC338-16BK	DIOTEC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC33816BU	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC33816D26Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-16D26Z	FAIRCHILD	获取价格	800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33816D27Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-16D27Z	FAIRCHILD	获取价格	800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33816D74Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-16D74Z	FAIRCHILD	获取价格	800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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