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BC338-16RL1 PDF预览

BC338-16RL1

更新时间: 2024-11-06 14:47:59
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
34页 347K
描述
800mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

BC338-16RL1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.36
Is Samacsys:N其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):210 MHz
Base Number Matches:1

BC338-16RL1 数据手册

 浏览型号BC338-16RL1的Datasheet PDF文件第2页浏览型号BC338-16RL1的Datasheet PDF文件第3页浏览型号BC338-16RL1的Datasheet PDF文件第4页浏览型号BC338-16RL1的Datasheet PDF文件第5页浏览型号BC338-16RL1的Datasheet PDF文件第6页浏览型号BC338-16RL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC337  
BC338  
25  
Unit  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
45  
50  
Vdc  
Vdc  
30  
5.0  
Vdc  
Collector Current — Continuous  
I
C
800  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 10 mA, I = 0)  
V
Vdc  
Vdc  
(BR)CEO  
BC337  
BC338  
45  
25  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 µA, I = 0)  
V
(BR)CES  
(BR)EBO  
BC337  
BC338  
50  
30  
C
E
EmitterBase Breakdown Voltage  
(I = 10 A, I = 0)  
V
5.0  
Vdc  
E
C
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= 30 V, I = 0)  
BC337  
BC338  
100  
100  
E
= 20 V, I = 0)  
E
Collector Cutoff Current  
I
nAdc  
nAdc  
CES  
(V  
CE  
(V  
CE  
= 45 V, V  
= 25 V, V  
= 0)  
= 0)  
BC337  
BC338  
100  
100  
BE  
BE  
Emitter Cutoff Current  
I
100  
EBO  
(V  
EB  
= 4.0 V, I = 0)  
C
2–94  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  

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