Datasheet > BC338-25

BC338-25

更新时间： 2024-09-16 06:41:35

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	121K
描述
NPN Plastic-Encapsulate Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC338-25 数据手册

M C C

BC337-16/25/40

BC338-16/25/40

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN

Plastic-Encapsulate

Transistors

xꢀ Capable of 0.625Watts of Power Dissipation.

xꢀ Collector-current 0.8A

xꢀ Collector-base Voltage :V_CBO=50V(BC337) , V_CBO=30V(BC338)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

TO-92

xꢀ Operating temperature : -55к to +150к

xꢀ Storage temperature : -55к to +150к

Electrical Characteristics @ 25к Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

---

Vdc

BC337

BC338

V_(BR)CBO

Collector-Base Breakdown Voltage

(I_C=100µAdc, I_E=0)

---

Vdc

BC337

BC338

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_E=10µAdc, I_C=0)

5.0

Vdc

Collector Cutoff Current

(V_CB=45Vdc,I_E=0)

(V_CB=25Vdc,I_E=0)

µAdc

BC337

BC338

---

0.1

I_CEO

Collector Cutoff Current

(V_CE=40Vdc,I_B=0)

(V_CE=20Vdc,I_B=0)

µAdc

BC337

BC338

---

0.2

0.1

I_EBO

Emitter Cutoff Current

(V_EB=4.0Vdc, I_C=0)

1.COLLECTOR

2.BASE

ON CHARACTERISTICS

h_FE(2)

V_CE(sat)

V_BE(sat)

DC Current Gain

(I_C=300mAdc, V_CE=1.0Vdc)

---

0.7

1.2

3.EMITTER

Collector-Emitter Saturation Voltage

(I_C=500mAdc, I_B=50mAdc)

Vdc

Base-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

---

DIMENSIONS

SMALL SIGNAL CHARACTERISTICS

f_T

Current-Gain-Bandwidth Product

(V_CE=5.0V, f=100MHz, I_C=10mA)

210

---

MHz

INCHES

MIN

.170

.550

.010

.130

.010

DIM

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

hFE CLASSIFICATION

Classification

h_FE(1)

100~250

A 011

160~400

B 011

250~630

C 011

Marking Code

www.mccsemi.com

1 of 3

Revision: 4

2006/05/18

12 3

中文翻译

下载PDF

与BC338-25相关器件

型号	品牌	获取价格	描述	数据表
BC338-25-5	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC338-25-AMMO	NXP	获取价格	TRANSISTOR 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC338-25BK	DIOTEC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC33825BU	ROCHESTER	获取价格	800mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, TO-92, 3 PIN
BC33825D26Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-25D26Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC33825D27Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-25D27Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC33825D74Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC338-25D74Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

与BC338-25相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

BC338-25

BC338-25 数据手册

与BC338-25相关器件

与BC338-25相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BC338-25

BC338-25 数据手册

与BC338-25相关器件

与BC338-25相关文章

您还可以找

您在本页遇到什么问题？