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BC338-25RLRM PDF预览

BC338-25RLRM

更新时间: 2024-11-01 13:05:51
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摩托罗拉 - MOTOROLA 晶体放大器晶体管
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4页 166K
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BC338-25RLRM 数据手册

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Order this document  
by BC337/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC337 BC338  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
45  
50  
25  
30  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
800  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 10 mA, I = 0)  
V
Vdc  
Vdc  
(BR)CEO  
BC337  
BC338  
45  
25  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 µA, I = 0)  
V
(BR)CES  
(BR)EBO  
BC337  
BC338  
50  
30  
C
E
EmitterBase Breakdown Voltage  
(I = 10 A, I = 0)  
V
5.0  
Vdc  
E
C
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= 30 V, I = 0)  
BC337  
BC338  
100  
100  
E
= 20 V, I = 0)  
E
Collector Cutoff Current  
I
nAdc  
nAdc  
CES  
(V  
CE  
(V  
CE  
= 45 V, V  
= 25 V, V  
= 0)  
= 0)  
BC337  
BC338  
100  
100  
BE  
BE  
Emitter Cutoff Current  
(V = 4.0 V, I = 0)  
I
100  
EBO  
EB  
C
Motorola, Inc. 1996

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