Datasheet > BC338-25

BC338-25

更新时间： 2024-11-01 06:41:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	34K
描述
TO-92 Plastic-Encapsulate Transistors

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BC338-25 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BC337,-16,-25,-40

TRANSISTOR (NPN)

TO-92

BC338, -16,-25,-40

FEATURES

1. COLLECTOR

2. BASE

Power dissipation

P_CM:

0.625

W (Tamb=25℃)

3. EMITTER

Collector current

I_CM:

0.8

1 2 3

Collector-base voltage

V_CBO

BC337 50

BC338 30

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

V_CBO

Ic= 100µA, I_E=0

Collector-base breakdown voltage

BC337

BC338

I_C= 10 mA , I_B=0

I_E= 10µA, I_C=0

Collector-emitter breakdown voltage

V_CEO

BC337

BC338

V_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

_CB= 45 V, I_E=0

0.1

µA

BC337

_CB= 25V, I_E=0

BC338

Collector cut-off current

I_CEO

V_CE= 40 V, I_B=0

_CE= 20 V, I_B=0

0.2

µA

BC337

BC338

I_EBO

V_EB= 4 V, I_C=0

0.1

µA

Emitter cut-off current

DC current gain

100

160

250

630

250

400

630

BC337/BC338

h_FE(1)

V_CE=1V, I_C= 100mA

BC337-16/BC338-16

BC337-25/BC338-25

BC337-40/BC338-40

H_FE(2)

V_CE=1V, I_C= 300mA

V_CE(sat)

I_C=500 mA, I_B= 50 mA

0.7

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_BE(sat)

I_C= 500 mA, I_B=50 mA

V_CE= 5V, I_C= 10mA

210

MHz

Transition frequency

f _T

f = 100MHz

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