5秒后页面跳转
BC33825 PDF预览

BC33825

更新时间: 2024-10-31 22:48:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关放大器
页数 文件大小 规格书
3页 27K
描述
SWITCHING AND AMPLIFIER APPLICATIONS

BC33825 数据手册

 浏览型号BC33825的Datasheet PDF文件第2页浏览型号BC33825的Datasheet PDF文件第3页 
BC337/338  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC327/BC328  
TO-92  
1. Collector 2. Base 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC337  
: BC338  
Collector-Emitter Voltage  
CES  
50  
30  
V
V
CEO  
EBO  
: BC337  
: BC338  
45  
25  
V
V
Emitter-Base Voltage  
5
800  
V
mA  
mW  
°C  
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
P
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC337  
: BC338  
45  
25  
V
V
BV  
BV  
Collector-Emitter Breakdown Voltage  
I =0.1mA, V =0  
C BE  
: BC337  
: BC338  
50  
30  
V
V
Emitter-Base Breakdown Voltage  
I =0.1mA, I =0  
5
V
E
C
I
Collector Cut-off Current  
: BC337  
CES  
V
V
=45V, I =0  
=25V, I =0  
B
2
2
100  
100  
nA  
nA  
CE  
CE  
B
: BC338  
h
h
DC Current Gain  
V
V
=1V, I =100mA  
100  
60  
630  
FE1  
FE2  
CE  
CE  
C
=1V, I =300mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base Emitter On Voltage  
I =500mA, I =50mA  
0.7  
1.2  
V
V
CE  
C
B
V
=1V, I =300mA  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=5V, I =10mA, f=50MHz  
100  
12  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
16  
100 ~ 250  
60-  
25  
40  
h
h
160 ~ 400  
100-  
250 ~ 630  
170-  
FE1  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

BC33825 替代型号

型号 品牌 替代类型 描述 数据表
BC338-25ZL1G ONSEMI

功能相似

Amplifier Transistors NPN Silicon
BC338-25ZL1 ONSEMI

功能相似

Amplifier Transistors
BC546A DIOTEC

功能相似

Si-Epitaxial PlanarTransistors

与BC33825相关器件

型号 品牌 获取价格 描述 数据表
BC338-25 CJ

获取价格

TO-92 Plastic-Encapsulate Transistors
BC338-25 MCC

获取价格

NPN Plastic-Encapsulate Transistors
BC338-25 WINNERJOIN

获取价格

TRANSISTOR (NPN)
BC338-25 MOTOROLA

获取价格

Amplifier Transistor
BC338-25 ONSEMI

获取价格

Amplifier Transistors(NPN Silicon)
BC338-25 INFINEON

获取价格

NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter
BC338-25 DIOTEC

获取价格

Si-Epitaxial PlanarTransistors
BC338-25-5 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BC338-25-AMMO NXP

获取价格

TRANSISTOR 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC338-25BK DIOTEC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,