BC338-16RLRA

更新时间： 2024-11-01 13:00:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管开关
页数	文件大小	规格书
4页	123K
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BC338-16RLRA 数据手册

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by BC337/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC337 BC338

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

Vdc

5.0

Vdc

Collector Current — Continuous

800

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 10 mA, I = 0)

Vdc

(BR)CEO

BC337

BC338

—

Collector–Emitter Breakdown Voltage

(I = 100 µA, I = 0)

(BR)CES

(BR)EBO

BC337

BC338

—

Emitter–Base Breakdown Voltage

(I = 10 A, I = 0)

5.0

—

Vdc

Collector Cutoff Current

nAdc

CBO

= 30 V, I = 0)

BC337

BC338

—

100

= 20 V, I = 0)

Collector Cutoff Current

nAdc

CES

= 45 V, V

= 25 V, V

= 0)

BC337

BC338

—

100

Emitter Cutoff Current

(V = 4.0 V, I = 0)

—

100

EBO

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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