5秒后页面跳转
BC337RLRM PDF预览

BC337RLRM

更新时间: 2024-11-28 13:05:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管开关
页数 文件大小 规格书
5页 70K
描述
800mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC337RLRM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.01最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):210 MHzBase Number Matches:1

BC337RLRM 数据手册

 浏览型号BC337RLRM的Datasheet PDF文件第2页浏览型号BC337RLRM的Datasheet PDF文件第3页浏览型号BC337RLRM的Datasheet PDF文件第4页浏览型号BC337RLRM的Datasheet PDF文件第5页 
BC337, BC337−25,  
BC337−40  
Amplifier Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
1
2
MAXIMUM RATINGS  
BASE  
Rating  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
3
EMITTER  
50  
Vdc  
5.0  
Vdc  
Collector Current − Continuous  
I
C
800  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO−92  
CASE 29  
STYLE 17  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
83.3  
q
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC33  
7−xx  
AYWW G  
G
BC337−xx = Device Code  
(Refer to page 4)  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 6  
BC337/D  

与BC337RLRM相关器件

型号 品牌 获取价格 描述 数据表
BC337T/R ETC

获取价格

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 800MA I(C) | TO-92
BC337-T/R NXP

获取价格

500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN
BC337TF ROCHESTER

获取价格

800mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, TO-92, 3 PIN
BC337TF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC337TFR FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC337-XBK DIOTEC

获取价格

General Purpose Si-Epitaxial Planar Transistors
BC337-X-T92-B UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC337-X-T92-K UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC337ZL1 ONSEMI

获取价格

Amplifier Transistors
BC337ZL1G ONSEMI

获取价格

Amplifier Transistors NPN Silicon