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BC337TFR PDF预览

BC337TFR

更新时间: 2024-11-28 21:04:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
3页 23K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC337TFR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.14最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC337TFR 数据手册

 浏览型号BC337TFR的Datasheet PDF文件第2页浏览型号BC337TFR的Datasheet PDF文件第3页 
BC337/338  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC327/BC328  
TO-92  
1. Collector 2. Base 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC337  
: BC338  
Collector-Emitter Voltage  
CES  
50  
30  
V
V
CEO  
EBO  
: BC337  
: BC338  
45  
25  
V
V
Emitter-Base Voltage  
5
800  
V
mA  
mW  
°C  
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
P
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC337  
: BC338  
45  
25  
V
V
BV  
BV  
Collector-Emitter Breakdown Voltage  
I =0.1mA, V =0  
C BE  
: BC337  
: BC338  
50  
30  
V
V
Emitter-Base Breakdown Voltage  
I =0.1mA, I =0  
5
V
E
C
I
Collector Cut-off Current  
: BC337  
CES  
V
V
=45V, I =0  
=25V, I =0  
B
2
2
100  
100  
nA  
nA  
CE  
CE  
B
: BC338  
h
h
DC Current Gain  
V
V
=1V, I =100mA  
100  
60  
630  
FE1  
FE2  
CE  
CE  
C
=1V, I =300mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base Emitter On Voltage  
I =500mA, I =50mA  
0.7  
1.2  
V
V
CE  
C
B
V
=1V, I =300mA  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=5V, I =10mA, f=50MHz  
100  
12  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
16  
100 ~ 250  
60-  
25  
40  
h
h
160 ~ 400  
100-  
250 ~ 630  
170-  
FE1  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

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