Datasheet > BC338

BC338

更新时间： 2024-11-04 06:41:35

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	163K
描述
NPN Plastic-Encapsulate Transistors

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中文翻译

获取价格

数据手册

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BC338 数据手册

BC337/BC338

NPN Plastic-Encapsulate Transistors

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

FEATURES

Power dissipation

P_{CM : 0.625}

Collector current

I_CM

Collector-base voltage

W Tamb=25

（

℃）

0.8

V_{(BR)CBO : BC337 50}

2 3

BC338 30

1. COLLECTOR

2. BASE

Operating and storage junction temperature range

T^JT^stg: -55

to +150

℃

，

℃

EMITTER

ELECTRICAL CHARACTERISTICS (Tamb=25

Я unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

V_CBO

Ic= -100µA , I_E=0

Collector-base breakdown voltage

BC337

BC338

I_C= -10 mA , I_B=0

I_E= -10µA, I_C=0

Collector-emitter breakdown voltage

V_CEO

BC337

BC338

V_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

_CB= -45V, I_E=0

_CB= -25V, I_E=0

0.1

µA

BC337

BC338

Collector cut-off current

I_CEO

V_CE= -40V, I_B=0

_CE= -20 V, I_B=0

0.2

µA

BC337

BC338

I_EBO

V_EB= -4 V, I_C=0

0.1

µA

Emitter cut-off current

DC current gain

h_FE(1)

h_FE(2)

V_CE=-1V, I_C= -100mA

V_CE=-1V, I_C= -300mA

I_C=-500 mA, I_B= -50 mA

100

630

V_CE(sat)

0.7

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_BE(sat)

V_BE

I_C= -500 mA, I_B=-50 mA

V_CE=1V, I_C= 300mA

Base-emitter voltage

1.2

_CE= -5V, I_C= -10mA

MHz

Transition frequency

f _T

210

f = 100MHz

V_CB=10V,I_E=0

f=1MHZ

Collector Output Capacitance

Cob

h_FECLASSIFICATION

Classification

100-250

h_FE1

160-400

250-630

Any changing of specification will not be informed individual

http://www.SeCoSGmbH.com

28-Jun-2007 Rev. A

Page 1 of 3

12 3

中文翻译

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