Datasheet > BC338

BC338

更新时间： 2024-11-28 12:50:15

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描述
TO-92 Plastic-Encapsulate Transistors (NPN)

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中文翻译

获取价格

数据手册

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BC338 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

BC337/BC338 TRANSISTOR (NPN)

TO-92

FEATURES

Power dissipation

1. COLLECTOR

2.BASE

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

3. EMITTER

Collector-Base Voltage

BC337

BC338

V_CEO

Collector-Emitter Voltage BC337

BC338

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Junction Temperature

Storage Temperature

℃

800

625

150

-55-150

P_D

T_j

T_stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_CBO

Test conditions

I_C= 100uA, I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BC337

BC338

Collector-emitter breakdown voltage

BC337

I_C= 10mA , I_B=0

V_CEO

BC338

Emitter-base breakdown voltage

V_EBO

I_CBO

I_E= 10uA, I_C=0

V_CB= 45V, I_E=0

Collector cut-off current

BC337

BC338

BC337

BC338

0.1

0.2

0.1

630

250

400

630

_CB= 25V, I_E=0

_CE= 40V, I_B=0

_CE= 20V, I_B=0

Collector cut-off current

I_CEO

I_EBO

Emitter cut-off current

BC337/BC338

V_EB= 4 V, I_C=0

100

160

250

BC337-16/BC338-16

BC337-25/BC338-25

BC337-40/BC338-40

h_FE(1)

V_CE=1V, I_C= 100mA

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE=1V, I_C= 300mA

I_C=500mA, I_B= 50mA

I_C= 500mA, I_B=50mA

V_CE=1V, I_C= 300mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

1.2

_CE= 5V, I_C= 10mA

f = 100MHz

_CB=10V,I_E=0

f=1MHZ

Transition frequency

f _T

210

MHz

Collector Output Capacitance

Cob

A,May,2011

中文翻译

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