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BC337RL1 PDF预览

BC337RL1

更新时间: 2024-11-28 04:08:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
5页 70K
描述
Amplifier Transistors

BC337RL1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.11Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):210 MHzBase Number Matches:1

BC337RL1 数据手册

 浏览型号BC337RL1的Datasheet PDF文件第2页浏览型号BC337RL1的Datasheet PDF文件第3页浏览型号BC337RL1的Datasheet PDF文件第4页浏览型号BC337RL1的Datasheet PDF文件第5页 
BC337, BC337−25,  
BC337−40  
Amplifier Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
1
2
MAXIMUM RATINGS  
BASE  
Rating  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
3
EMITTER  
50  
Vdc  
5.0  
Vdc  
Collector Current − Continuous  
I
C
800  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO−92  
CASE 29  
STYLE 17  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
83.3  
q
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC33  
7−xx  
AYWW G  
G
BC337−xx = Device Code  
(Refer to page 4)  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 6  
BC337/D  

BC337RL1 替代型号

型号 品牌 替代类型 描述 数据表
PN2907ABU ONSEMI

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General Purpose Transistor PNP Silicon
BC33725TA ONSEMI

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NPN Bipolar Transistor

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暂无描述
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