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PN2907ABU PDF预览

PN2907ABU

更新时间: 2024-11-27 11:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 99K
描述
General Purpose Transistor PNP Silicon

PN2907ABU 技术参数

是否无铅:不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.58
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

PN2907ABU 数据手册

 浏览型号PN2907ABU的Datasheet PDF文件第2页浏览型号PN2907ABU的Datasheet PDF文件第3页浏览型号PN2907ABU的Datasheet PDF文件第4页 
DATA SHEET  
www.onsemi.com  
PNP General-Purpose  
Transistor  
E
PN2907  
B
C
TO−92 3 4.825x4.76  
CASE 135AN  
Description  
This device is designed for use with general−purpose amplifiers and  
switches requiring collector currents to 500 mA.  
These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free  
and are RoHS compliant.  
MARKING DIAGRAM  
APN  
2907  
YWW  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
(Note 1, 2)  
A
Symbol  
Parameter  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Value  
−40  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
−60  
V
−5.0  
V
PN2907 = Specific Device Code  
I
Collector Current − Continuous  
−800  
mA  
°C  
A
= Assembly Site  
C
Y
WW  
= Year of Production  
= Work Week Number  
T , T  
Operating and Storage Junction  
Temperature Range  
−55 to +150  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steady−state limits. onsemi should be consulted on applications  
involving pulsed or low−duty cycle operations.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Max  
(Note 3)  
Symbol  
Parameter  
Total Device Dissipation  
Unit  
mW  
P
D
625  
Derate Above 25°C  
5.0  
mW/°C  
°C/W  
°C/W  
R
q
JC  
Thermal Resistance, Junction to Case  
83.3  
200  
R
q
JA  
Thermal Resistance, Junction to Ambient  
3
3. PCB size: FR−4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with  
minimum land pattern size.  
© Semiconductor Components Industries, LLC, 1997  
1
Publication Order Number:  
August, 2022 − Rev. 4  
PN2907/D  
 

PN2907ABU 替代型号

型号 品牌 替代类型 描述 数据表
PN2907ATF ONSEMI

完全替代

General Purpose Transistor PNP Silicon
BC33725TF ONSEMI

类似代替

NPN Bipolar Transistor
BC33725TFR ONSEMI

类似代替

NPN Bipolar Transistor

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