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BC214LB_L34Z

更新时间： 2024-11-05 20:07:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 44K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE PACKAGE-3

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BC214LB_L34Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.66最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：30 V配置：SINGLE
最小直流电流增益 (hFE)：140JEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

BC214LB_L34Z 数据手册

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BC214LB  
PNP General Purpose Amplifier  
•
This device is deisgned for use as general purpose amplifiers and  
switches requiring collector currents to 300mA.  
Sourced from process 68.  
•
TO-92  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-30  
-45  
-5.0  
-500  
Units  
V
V
V
mA  
°C  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current (DC)-  
CEO  
CBO  
EBO  
I
- Continuous  
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
I
I
I
V
V
= -2mA, I = 0  
-30  
-45  
-5.0  
V
V
V
nA  
nA  
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= -10µA, I = 0  
E
= -10µA, I = 0  
C
I
I
= -30V, I = 0  
-15  
-15  
CB  
EB  
E
= -4V, I = 0  
EBO  
C
On Characteristics *  
h
DC Current Gain  
V
= -5V, I = -2mA  
140  
400  
FE  
CE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= -10mA, I = -0.5mA  
-0.25  
-0.6  
V
CE  
C
C
B
= -100mA, I = -5mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
V
= -100mA, I = -5mA  
-1.1  
-0.72  
V
V
BE  
C
B
= -5V, I = -2mA  
-0.6  
200  
BE  
CE  
C
Small Signal Characteristics  
f
Current gain Bandwidth Product  
V
= -5V, I = -10mA  
MHz  
dB  
T
CE  
C
f = 100MHz  
V
RG = 2kΩ, f = 15.7KHz  
NF  
Noise Figure  
= -5V, I = -200µA  
2.0  
400  
10  
CE  
C
h
Small Signal Current Gain  
Output Capacitance  
I
= -2mA, V = -5V  
200  
fe  
C
CE  
f = 1KHz  
C
V
= -10V, f = 1MHz  
pF  
OB  
CB  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
©2003 Fairchild Semiconductor Corporation  
Rev. A, October 2003  
1234

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BC214LB_L34Z 替代型号

型号 品牌 替代类型 描述 数据表
BC214LC FAIRCHILD

完全替代

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