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BC214RL PDF预览

BC214RL

更新时间: 2024-11-05 13:05:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 111K
描述
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BC214RL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.42Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):140JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):320 MHzBase Number Matches:1

BC214RL 数据手册

 浏览型号BC214RL的Datasheet PDF文件第2页浏览型号BC214RL的Datasheet PDF文件第3页浏览型号BC214RL的Datasheet PDF文件第4页 
Order this document  
by BC212/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC BC BC  
212 213 214  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–50 –30 –30  
–60 –45 –45  
–5.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
BC212  
BC213  
BC214  
V
–50  
–30  
–30  
Vdc  
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = –10 A, I = 0)  
BC212  
BC213  
BC214  
V
–60  
–45  
–45  
Vdc  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
BC212  
BC213  
BC214  
V
–5  
–5  
–5  
Vdc  
(BR)EBO  
E
C
Collector–Emitter Leakage Current  
(V = –30 V)  
BC212  
BC213  
BC214  
I
–15  
–15  
–15  
nAdc  
nAdc  
CBO  
CB  
Emitter–Base Leakage Current  
(V = –4.0 V, I = 0)  
BC212  
BC213  
BC214  
I
–15  
–15  
–15  
EBO  
EB  
C
Motorola, Inc. 1996  

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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN