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BC214RLRA PDF预览

BC214RLRA

更新时间: 2024-11-05 13:05:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
4页 111K
描述
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC214RLRA 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.42
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):140JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
功耗环境最大值:1 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):320 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC214RLRA 数据手册

 浏览型号BC214RLRA的Datasheet PDF文件第2页浏览型号BC214RLRA的Datasheet PDF文件第3页浏览型号BC214RLRA的Datasheet PDF文件第4页 
Order this document  
by BC212/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC BC BC  
212 213 214  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–50 –30 –30  
–60 –45 –45  
–5.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
BC212  
BC213  
BC214  
V
–50  
–30  
–30  
Vdc  
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = –10 A, I = 0)  
BC212  
BC213  
BC214  
V
–60  
–45  
–45  
Vdc  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
BC212  
BC213  
BC214  
V
–5  
–5  
–5  
Vdc  
(BR)EBO  
E
C
Collector–Emitter Leakage Current  
(V = –30 V)  
BC212  
BC213  
BC214  
I
–15  
–15  
–15  
nAdc  
nAdc  
CBO  
CB  
Emitter–Base Leakage Current  
(V = –4.0 V, I = 0)  
BC212  
BC213  
BC214  
I
–15  
–15  
–15  
EBO  
EB  
C
Motorola, Inc. 1996  

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