生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
其他特性: | LOW NOISE | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC212G/D89Z | TI |
获取价格 |
50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
BC212G/L34Z | TI |
获取价格 |
50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
BC212K | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-92 | |
BC212KA | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-92 | |
BC212KB | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-92 | |
BC212L | MICRO-ELECTRONICS |
获取价格 |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR | |
BC212L | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier | |
BC212L_NL | ROCHESTER |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC212LA | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-92 | |
BC212LB | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier |