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BC212LD74Z PDF预览

BC212LD74Z

更新时间: 2024-11-04 15:44:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
7页 550K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC212LD74Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.59
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC212LD74Z 数据手册

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BC212L  
B
C
E
TO-92  
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier applications at collector currents to 300mA.  
Sourced from Process 68.  
Absolute Maximum Ratings*  
TA  
= 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
50  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
300  
mA  
°C  
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ,  
T
stg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA  
= 25°C unless otherwise noted  
Characteristic  
Max  
Symbol  
Units  
Total Device Dissipation  
PD  
625  
5.0  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
RqJC  
RqJA  
Rev. A 7/24/00  
Ó 2000 Fairchild Semiconductor International  

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