BC213

更新时间： 2024-11-03 22:27:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	111K
描述
Amlifier Transistors (PNP)

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BC213 数据手册

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by BC212/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

BC BC BC

212 213 214

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–50 –30 –30

–60 –45 –45

–5.0

Vdc

Collector Current — Continuous

–100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

BC212

BC213

BC214

–50

–30

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = –10 A, I = 0)

BC212

BC213

BC214

–60

–45

—

Vdc

(BR)CBO

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

BC212

BC213

BC214

–5

—

Vdc

(BR)EBO

Collector–Emitter Leakage Current

(V = –30 V)

BC212

BC213

BC214

—

–15

nAdc

CBO

Emitter–Base Leakage Current

(V = –4.0 V, I = 0)

BC212

BC213

BC214

—

–15

EBO

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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