Datasheet > BC212LD26Z

BC212LD26Z

更新时间： 2024-11-05 03:34:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	550K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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BC212LD26Z 数据手册

BC212L

TO-92

PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector currents to 300mA.

Sourced from Process 68.

Absolute Maximum Ratings*

T_A

= 25°C unless otherwise noted

Value

Symbol

Parameter

Units

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector Current - Continuous

300

°C

I_C

Operating and Storage Junction Temperature Range

-55 to +150

T_J,

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_A

= 25°C unless otherwise noted

Characteristic

Max

Symbol

Units

Total Device Dissipation

P_D

625

5.0

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

83.3

200

°C/W

R_qJC

R_qJA

Rev. A 7/24/00

Ó ^{2000 Fairchild Semiconductor International}

12 3 4 5 6 7

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