Datasheet > BAW56C_15

BAW56C_15

更新时间： 2024-09-11 01:22:47

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页数	文件大小	规格书
2页	352K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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BAW56C_15 数据手册

SEMICONDUCTOR

BAW56C

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

· Small Package : SOT-23(1).

DIM MILLIMETERS

2.90 0.1

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.10

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

0.20 MIN

SYMBOL

V_RM

V_R

RATING

UNIT

1.00+0.20/-0.10

Maximum (Peak) Reverse Voltage

Reverse Voltage

1. CATHODE

2. CATHODE

3. ANODE

I_F

Continuous Forward Current

Surge Current (10ms)

200

I_FSM

P_D

Power Dissipation

225*

150

℃

T_j

Junction Temperature

SOT-23(1)

T_stg

Storage Temperature Range

-55∼ 150

℃

* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)

Marking

Lot No.

Type Name

H6C

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Voltage

SYMBOL

V_R

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_R=100uA

V_F(1)

V_F(2)

V_F(3)

I_R

I_F=1mA

0.6

0.65

0.8

1.25

0.5

I_F=10mA

Forward Voltage

0.72

I_F=150mA

V_R=80V

Reverse Current

μA

C_T

V_R=0, f=1MHz

Total Capacitance

2015. 5. 12

Revision No : 0

1/2

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