Datasheet > BAW56DW

BAW56DW

更新时间： 2024-09-10 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		二极管光电二极管
页数	文件大小	规格书
3页	362K
描述
SOT-363 Plastic-Encapsulate Diode

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中文翻译

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BAW56DW 数据手册

WILLAS

BAW56DW

SOT-363 Plastic-Encapsulate Diode

SWITCHING DIODE

SOT-363

FEATURES

Fast Switching Speed

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

MAKING: KJC

Maximum Ratings @T_A=25℃

Parameter

Symbol

Limits

Unit

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

V_RRM

V_RWM

V_R

DC Blocking

Voltage

300

150

Forward Continuous Current

I_FM

I_O

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0s

I_FSM

200

Power Dissipation

P_D

R_θJA

T_J

℃/W

℃

625

150

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature

Storage temperature

-55-150

T_STG

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V_{(BR) R}

I_R= 2.5µA

V_R=75V

V_R=20V

2.5

Reverse voltage leakage current

Forward voltage

I_R

µA

0.025

I_F=1mA

715

855

1000

1250

I_F=10mA

I_F=50mA

I_F=150mA

V_F

Junction capacitance

Reveres recovery time

C_T

t_rr

V_R=0, f=1MHz

I_F=I_R=10mA,I_rr=0.1×I_R,

R_L=100Ω

2012-12

WILLAS ELECTRONIC CORP.

12 3

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BAW56DW_15	WINNERJOIN	获取价格	SWITCHING DIODE
BAW56DW-13	DIODES	获取价格	Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
BAW56DW-7	DIODES	获取价格	Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
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BAW56DW-AU	PANJIT	获取价格	SOT-363
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