Datasheet > BAW56

BAW56

更新时间： 2024-11-12 06:41:31

品牌	Logo	应用领域
商朗 - LUNSURE		二极管开关
页数	文件大小	规格书
2页	48K
描述
350mw 75volt dual switching diode

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中文翻译

获取价格

数据手册

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BAW56 数据手册

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

BAW56

Features

Low Current Leakage

Low Cost

Small Outline Surface Mount Package

350mW 75Volt

Dual Switching Diode

Pin Configuration

Top View

A 1

SOT-23

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 357K/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

Average Rectified

Output Current

Power Dissipation

Peak Forward Surge

Current

V_R

I_O

75V

150mA

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

P_TOT

I_FSM

350mW

1.0A

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

t=1s,Non-Repetitive

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

855mV I_FM= 10mA;

T_J= 25°C*

.085

.37

V_R=75Volts

T_J= 25°C

T_J= 150°C

2.5mA

50mA

Suggested Solder

Pad Layout

.031

.800

Typical Junction

Capacitance

Reverse Recovery

Time

C_J

T_rr

2pF

4nS

Measured at

1.0MHz, V_R=0V

I_F=10mA

.035

.900

V_R= 0V

.079

2.000

inches

R_L=500W

*Pulse test: Pulse width 300 msec, Duty cycle 2%

.037

.950

.037

.950

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中文翻译

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