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BAW56_06 PDF预览

BAW56_06

更新时间: 2024-11-12 03:21:19
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 57K
描述
SURFACE MOUNT FAST SWITCHING DIODE

BAW56_06 数据手册

 浏览型号BAW56_06的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
SOT-23 Formed SMD Package  
BAW56  
SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES  
Silicon planar high-speed switching Common Anode  
PACKAGE OUTLINE DETAILS  
ALL DIMENSIONS IN mm  
Marking  
BAW56 = A1  
Pin configuration  
1 = CATHODE  
2 = CATHODE  
3 = ANODE  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
Continuous reverse voltage  
Repetitive peak reverse voltage  
Repetitive peak forward current  
Junction temperature  
V
V
I
max.  
max.  
max. 450 mA  
max. 150 °C  
75 V  
85 V  
R
RRM  
FRM  
T
j
Forward voltage at I = 50 mA  
F
V
<
1,0 V  
F
Reverse recovery time when switched from  
I
F
= 10 mA to I = 10 mA; R = 100 ;  
R L  
measured at I = 1 mA  
t
<
<
4 ns  
R
rr  
Recovery charge when switched from  
= 10 mA to V = 5 V; R = 100 Ω  
I
F
Q
45 pC  
R
L
s
RATINGS (per diode) (at T = 25°C unless otherwise specified)  
A
Limiting values  
Continuous reverse voltage  
Repetitive peak reverse voltage  
V
max.  
max.  
75 V  
85 V  
R
V
RRM  

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