Datasheet > BAW56_18

BAW56_18

更新时间： 2024-11-13 01:26:15

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2691K
描述
SOT-23 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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BAW56_18 数据手册

BAW56/BAV70/BAV99

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes

Features

SOT- 23

●

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Marking:

BAV70

BAV99

W56

MARKING:A1

MARKINGA4

MARKING:A7

Parameter

Symbol

Limit

Unit

Reverse Voltage

Forward Current

V_R

I_F

200

2.0

I_FSM

P_D

Non-Repetitive Peak

Forward Surge Current @t=8.3ms

Power Dissipation

℃/W

℃

225

556

150

Thermal Resistance Junction to Ambient

Junction Temperature

R_θJA

T_J

Storage Temperature range

T_STG

-55~+150

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

V _R

Min

Typ

Max

Unit

Conditions

I_R=100μA

Reverse breakdown voltage

0.715

0.855

V_F1

I_F=1mA

V_F2

I_F=10mA

Forward voltage

V_F3

V_F4

I_F=50mA

1.25

2.5

I_F=150mA

Reverse current

I_R

μA

V_R=70V

1.5

Capacitance between terminals

C_T

V_R=0,f=1MHz

I_F= I_R= 10mA,

Reverse recovery time

t _{r r}

Irr= 0.1 x I_R, R_L= 100Ω

igh Diode Semiconductor

12 3 4

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