Datasheet > BAW56_08

BAW56_08

更新时间： 2024-11-12 12:50:03

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
3页	215K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

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中文翻译

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BAW56_08 数据手册

BAW56

DUAL SURFACE MOUNT SWITCHING DIODE

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Features

Mechanical Data

•

Fast Switching Speed

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

Surface Mount Package Ideally Suited for Automated Insertion

For General Purpose Switching Applications

High Conductance

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Qualified to AEC-Q101 Standards for High Reliability

•

SOT-23

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current (Note 1)

300

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

350

Unit

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

357

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Symbol

V_(BR)R

Min

Max

⎯

Unit

Test Condition

I_R= 2.5μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.715

0.855

1.0

Forward Voltage

V_F

⎯

1.25

V_R= 75V

μA

2.5

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Reverse Current (Note 2)

I_R

Total Capacitance

2.0

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 3

www.diodes.com

May 2008

BAW56

Document number: DS12008 Rev. 18 - 2

12 3

中文翻译

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与BAW56_08相关器件

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BAW56_10	TSC	获取价格	225mW SMD Switching Diode
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BAW56_11	MCC	获取价格	350mW 75Volt Dual Switching Diode
BAW56_12	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAW56_15	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAW56_16	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAW56_18	VISHAY	获取价格	Small Signal Switching Diode, Dual
BAW56_18	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAW56_18	HDSEMI	获取价格	SOT-23 Plastic-Encapsulate Diodes
BAW56_NL	FAIRCHILD	获取价格	Rectifier Diode, 2 Element, 0.2A, 85V V(RRM), Silicon, SOT-23, 3 PIN

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