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BAV70WT PDF预览

BAV70WT

更新时间: 2024-11-18 04:08:51
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
2页 345K
描述
200mW Switching Diode

BAV70WT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.89配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:2端子数量:3
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.2 W
认证状态:Not Qualified最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

BAV70WT 数据手册

 浏览型号BAV70WT的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
BAV70WT  
Micro Commercial Components  
Features  
Power dissipation: 200mW (Tamb=25)  
200mW Switching  
Diode  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
For Surface Mount Application  
Marking KJA  
SOT-323  
A
D
Maximum Ratings  
C
B
Operating Temperature: -55to +150℃  
Storage Temperature: -55to +150℃  
F
E
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
VR  
75V  
IR=100μA  
K
Peak Forward  
Current  
IF  
150mA  
DIMENSIONS  
INCHES  
MM  
Maximum  
Instantaneous  
Forward Voltage  
0.715V IFM =1mA;  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
VF  
0.855  
1.0V  
1.25V  
I
I
I
FM =10mA;  
FM =50mA;  
FM =150mA;  
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.30  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
Maximum DC  
F
.012  
.000  
.035  
.004  
.012  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
VR=75Volts  
2.5µA  
G
H
J
K
Diode Capacitance  
CD  
Trr  
2pF  
4ns  
Measured at 1.0MHz,  
VR=0V  
IF=IR=10mA  
Irr=0.1IR  
Suggested Solder  
Pad Layout  
0.70  
Reverse Recovery  
Time  
RL=100Ω  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: 2  
2006/05/13  
1 of 2  

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