Datasheet > BAV70W-T1-LF

BAV70W-T1-LF

更新时间： 2024-11-18 20:06:47

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
4页	61K
描述
Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

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BAV70W-T1-LF 数据手册

WTE

POWER SEMICONDUCTORS

BAV70W

SURFACE MOUNT FAST SWITCHING DIODE

Features

ꢀ

High Conductance

ꢀ

Fast Switching

Surface Mount Package Ideally Suited for

Automatic Insertion

ꢀ

For General Purpose and Switching

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOT-323

Min

Dim

Max

0.40

1.35

2.20

0.30

Mechanical Data

1.15

ꢀ

Case: SOT-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

2.00

0.65 Nominal

ꢀ

0.30

1.20

1.80

—

0.40

1.40

2.20

0.10

1.10

—

ꢀ

Polarity: See Diagram

Weight: 0.006 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

0.90

0.25

0.05

0.15

All Dimensions in mm

TOP VIEW

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Forward Continuous Current (Note 1)

300

150

Average Rectified Output Current (Note 1)

Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

@ t < 1.0µs

IFSM

2.0

200

K/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

RθJA

Tj, TSTG

625

-65 to +150

Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

@ I^F= 10mA

—

0.855

1.0

Forward Voltage

@ I^F= 50mA

Reverse Leakage Current

Junction Capacitance

—

2.5

2.0

µA

@ VR = 75V

VR = 0V, f = 1.0MHz

I^F= IR = 10mA,

IRR = 0.1 x IR, RL = 100Ω

Reverse Recovery Time

trr

—

6.0

Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.

BAV70W

1 of 4

12 3 4

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