Datasheet > BAV70GS08

BAV70GS08

更新时间： 2024-11-18 14:47:59

品牌	Logo	应用领域
威世 - VISHAY		光电二极管
页数	文件大小	规格书
4页	79K
描述
SIGNAL DIODE, PLASTIC, SOT-23, 3 PIN

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中文翻译

获取价格

技术参数
数据手册

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BAV70GS08 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-23
包装说明：	R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.02
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-G3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

BAV70GS08 数据手册

BAV70

Vishay Telefunken

Dual Switching Diode

Features

Fast switching speed

Electrically identical to standard JEDEC 1N4148

High conductance

Surface mount package ideally suited for

automatic insertion

Common cathode

94 8550

Order Instruction

Type

Type Differentiation

V = 70 V

Ordering Code

BAV70–GS08

Remarks

Tape and Reel

BAV70

Absolute Maximum Ratings

T = 25 C

Parameter

Non repetitive peak reverse voltage

Test Conditions

Type Symbol

Value

100

Unit

Repetitive peak reverse voltage=

Working peak reverse voltage=

DC Blocking voltage

RRM

RWM

t =1s

t =1 s

4.5

FSM

Peak forward surge current

half wave rectification with

resistive load and f ≥ 50 MHz,

on ceramic substrate

Average forward current

150

FAV

10 mmx8 mmx0.7 mm

Forward current

Power dissipation

250

300

on ceramic substrate

10 mmx8 mmx0.7 mm

tot

Junction and storage

temperature range

T =T

–55...+150

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on ceramic substrate 10 mmx8 mmx0.7 mm

Symbol

thJA

Value

430

Unit

K/W

www.vishay.com

1 (4)

Document Number 85546

Rev. 4, 14-Feb-01

12 3 4

中文翻译

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