Datasheet > BAT62-03W

BAT62-03W

更新时间： 2024-09-25 06:41:31

品牌	Logo	应用领域
科信 - KEXIN		二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Silicon Schottky Doide

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中文翻译

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数据手册

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BAT62-03W 数据手册

SMD Type

Diodes

Silicon Schottky Doide

BAT62-03W

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

Low Barrier diode for detectors up to GHz frequencies

+0.1

2.6

-0.1

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Forward current

Symbol

V^R

Value

Unit

I^F

Junction current

T^j

150

Storage temperature

Tstg

Ptot

-55 to+150

100

K/W

Total power dissipation

Junction ambient ⁽¹⁾

Junction-soldering point

Note:

RthJA

R^thJS

650

810

1.Package mounted on an epoxy pcb 15 mm 16.7mmm

0.7 mm

Electrical Characteristics Ta = 25

Parameter

Breakdown current

Symbol

I^R

Test Condition

VR = 40 V, TA = 25

IF = 2 mA

Min

Typ

Max

Unit

Forward voltage

V^F

0.58

0.35

0.1

225

Diode capacitance

C^T

VR = 0; f = 1 MHz

f = 1 MHz

0.6

Case capacitance

C^C

Differential forward resistance

Series inductance chip to ground

R^O

VR = , f = 10 kHz

Marking

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