Datasheet > BAT62-07W

BAT62-07W

更新时间： 2024-11-13 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管测试光电二极管
页数	文件大小	规格书
1页	60K
描述
Low barrier diode for detectors up to GHz frequencies.

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BAT62-07W 数据手册

Product specification

BAT62-07W

SOT-343

Unit: mm

Features

Low barrier diode for detectors up to GHz frequencies.

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Symbol

V^R

Value

Unit

Forward current

I^F

P^tot

100

Total power dissipation, T^S= 103

Junction temperature

T^j

150

Storage temperature range

Junction - ambient

T^stg

R^{th JA}

R^{th JS}

-55 to + 150

630

K/W

Junction - soldering point

470

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Test Condition

Min

Typ

Max

Unit

V^R= 40 V

I^F= 2 mA

Forward voltage

I^F

0.58

0.35

0.1

225

Diode capacitance

C^T

f = 1 MHz; V^R= 0

f = 1 MHz

0.6

Case capacitance

C^C

Differential resistance

Series inductance chip to ground

R^O

L^S

V^R= 0, f = 10 KHz

Marking

62s

1 of 1

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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