Datasheet > BAT62-08S

BAT62-08S

更新时间： 2024-11-13 12:53:47

品牌	Logo	应用领域
TYSEMI		二极管测试光电二极管
页数	文件大小	规格书
1页	60K
描述
Low barrier diode for detectors up to GHz frequencies

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中文翻译

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BAT62-08S 数据手册

Product specification

BAT62-08S;BAT62-09S

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Low barrier diode for detectors up to GHz frequencies

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Forward current

Symbol

V^RM

V^R

Rating

Unit

I^FM

100

Total power dissipation; T^S

Junction temperature

105

T^j

150

Storage temperature range

T^stg

-55 to +150

Junction - soldering point¹⁾

BAT62-08S

R^thJS

K/W

450

tbd

BAT62-09S

Note

1.For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Conditions

V^R= 40 V

I^F= 2 mA

Min

Typ

Max

Unit

Forward voltage

V^F

0.58

Forward voltage matching²⁾

Note

ÄV^F

2.ÄVF is the difference between lowest and highest VF in a multiple diode component.

Marking

Type

BAT62-08S

62s

BAT62-09S

69s

Marking

1 of 1

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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