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BAT54S_NL PDF预览

BAT54S_NL

更新时间: 2024-10-31 23:16:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
3页 112K
描述
Schottky Barrier Diode

BAT54S_NL 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.03
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.29 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAT54S_NL 数据手册

 浏览型号BAT54S_NL的Datasheet PDF文件第2页浏览型号BAT54S_NL的Datasheet PDF文件第3页 
February 2005  
BAT54/A/C/S  
Schottky Diodes  
Connection Diagram  
BAT54  
BAT54A  
3
3
3
3
L4P  
2
1
1
2NC  
2
1
2
BAT54C  
BAT54S  
MARKING  
= L4P BAT54A = L42  
= L43 BAT54S = L44  
3
3
1
BAT54  
BAT54C  
SOT-23  
1
2
1
2
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
RRM  
F(AV)  
FSM  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
30  
Unit  
V
V
I
I
200  
mA  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
600  
T
T
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
D
Parameter  
Value  
290  
Unit  
mW  
P
Power Dissipation  
R
Thermal Resistance, Junction to Ambient  
430  
°C/W  
θJA  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
R
Parameter  
Conditions  
Min.  
30  
Max.  
Units  
V
V
Breakdown Voltage  
I
= 10µA  
V
R
Forward Voltage  
I
I
I
I
I
= 0.1mA  
= 1mA  
= 10mA  
= 30mA  
= 100mA  
240  
320  
400  
500  
0.8  
mV  
mV  
mV  
mV  
V
F
F
F
F
F
F
I
Reverse Leakage  
V
V
= 25V  
2
µA  
pF  
ns  
R
R
R
C
Total Capacitance  
= 1V, f = 1.0MHz  
10  
5.0  
T
t
Reverse Recovery Time  
I = I = 10mA, I = 1.0mA,  
F R RR  
R = 100Ω  
rr  
L
©2005 Fairchild Semiconductor Corporation  
BAT54/A/C/S Rev. E1  
1
www.fairchildsemi.com  

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